Emerging transistor technologies are very often affected by traps leading to unintentional memory effects and inconsistent device characteristics by means of conventional characterization techniques. Pulsed measurements with narrow pulses and very small duty cycles allow a trap-free electrical device characterization preventing false conclusions for technology development and device performance. (M. Haferlach et al. in IEEE Transactions on Nanotechnology, 10.1109/TNANO.2016.2564925)