Physics-based compact models for CNTFETs have failed so far to correctly predict the transistor behavior above the onset of optical scattering. By considering analytically that carrier injection from the drain is suppressed once source injected carriers are accumulated at the band edge due to optical phonon scattering, the applicability of the compact models has successfully been extended beyond the onset of optical phonon scattering. (I. Bejenari et al. in Transactions of Electron Devices, 10.1109/TED.2015.2512180)