Upcoming Events


International Workshop on Defect engineering in SiC for quantum technology

08.12.2016 (Thursday) - 09.12.2016 (Friday) , 13:00 - 17:00
Helmholtz-Zentrum Dresden-Rossendorf , Dresden

Everbody welcome! Please register (no fee) by sending an email to:

Prof. Dr. Manfred Helm
Institute of Ion Beam Physics and Materials Research
Helmholtz-Zentrum Dresden-Rossendorf (HZDR)
P.O. Box 510119
01314 Dresden, Germany
phone: +49 351 260 2260,  fax: -3285, secr.: -2345
e-mail: m.helm@hzdr.de
web: www.hzdr.de/fwi

International Workshop on "Defect engineering in SiC for quantum technology"
December 8 - 9, 2016
Helmholtz-Zentrum Dresden-Rossendorf
Organizers: Shengqiang Zhou, Yu Liu (HZDR), Jurgen von Bardeleben (UPMC, Paris), Adam Gali (Wigner Research Centre for Physics, Budapest)
Thursday, December 8, 2016, Room: 106/255 – Hörsaal
13:00 Light lunch, coffee
14:15 Welcome by Manfred Helm

Session 1, Chair: Adam Gali
14:30 Jurgen von Bardeleben (Pierre and Marie Curie University - Paris 6)
NV Center in Silicon carbide: predictions, results and perspectives
15:00 Georgy Astakhov (University of Würzburg)
Engineering highly-coherent spin centers in SiC
15:30 Gabriel Ferro (University Lyon 1)
SiC thin layers engineering for quantum photonics structure: material approach
16:00 Coffee break

Session 2, Chair: Jurgen von Bardeleben
16:30 Adam Gali (Wigner Research Centre for Physics, Budapest)
Ab initio simulations on SiC qubits
17:00 Michel Bockstedte (University of Salzburg)
Spin physics and optical excitation of defect centers in SiC
17:30 Uwe Gerstmann (University of Paderborn)
Single spins and spin-coupling in SiC thin-layers and interfaces
18:00 Peter Michel (HZDR)
ELBE as a potential facility for defect engineering

19:30-22:00 Dinner together at Augustinerkeller (transport to the hotel will be
arranged by HZDR)

Friday December 9, 2016, Room: 114/202 - Seminarraum
8:00 Pickup by mini-Bus from Hotel, leaves at 8:00

Session 3, Chair: Georgy Astakhov
9:00 Jörg Wrachtrup (University of Stuttgart)
Single spins and spin photon interaction in SiC
9:30 Guido Burkard (University of Konstanz)
Theory of optical control of electron and nuclear spins in defects
10:00 Nguyen Tien Son (Linköping University)
Material growth and defect engineering in silicon carbide
10:30 Stefan Facsko (HZDR)
Ion beam center at HZDR

Session 4, Chair: Stefan Facsko
11:00-12:00 Break and visit of IBC
12:00-13:00 Lunch

Session 5, Chair: Jörg Wrachtrup
13:00 Dion Braukmann (Technical University of Dortmund)
High-frequency optically detected magnetic resonance of NV- centers in diamond
13:30 Martin Brandt (Technical University of München)
Electrical readout of defect spin states by photoionization
14:00 Michael Trupke (University of Vienna)
Control architectures and photonic interfaces for qubits in crystals
14:30 Tom Bosma (University of Groningen)
Optical coherent control of lattice-defect spins in SiC device structures
15:00 Fedor Jelezko (University of Ulm)

15:30-17:00 Free discussion and departure

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